2N7635-GA

Overview

The 2N7635-GA is a Silicon Carbide (SiC) Super Junction Transistor manufactured by GeneSiC Semiconductor. It features a normally-off configuration with a drain-to-source voltage rating of 650V and a continuous current capacity of 4A. The device operates at junction temperatures up to 225°C, with a maximum operating temperature of 250°C. Key electrical parameters include an on-resistance of 415mΩ at 4A and an input capacitance of 324pF at 35V. Power dissipation is rated at 47W under case conditions. The component utilizes a TO-257 through-hole package with an electrically isolated base plate.

Feature Summary

• Utilizes Silicon Carbide material for high-temperature stability
• Features a gate oxide-free super junction design
• Includes an electrically isolated base plate

Applications

• High-temperature power switching applications
• Industrial power conversion systems
• Automotive electronics requiring thermal resilience

Procurement Notes

Verify the specific manufacturer designation when sourcing, as some distributors may list this part under alternative brand names such as Navitas Semiconductor due to corporate acquisitions or rebranding. Confirm that the component meets application requirements regarding its non-compliance with RoHS standards. Ensure the TO-257 through-hole mounting type aligns with the target PCB layout and thermal management strategy before finalizing procurement orders.

Selection Notes

Select this component for designs requiring robust performance in extreme thermal environments exceeding standard silicon limits. The 650V rating suits medium-voltage DC applications. Consider the 4A current limit and 47W power dissipation when designing heat sinks. The through-hole TO-257 package dictates specific board space and assembly constraints compared to surface-mount alternatives.

Part Context

This device belongs to the family of Silicon Carbide Super Junction FETs designed for high-efficiency power switching. It replaces traditional silicon MOSFETs in scenarios demanding higher breakdown voltages and superior thermal conductivity. The technology focuses on reducing switching losses while maintaining reliability under harsh operating conditions typical of modern power electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.