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Product Detailed Parameters
- Description：TRANS SJT 650V 7A TO257
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：600 V
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：20 A
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：685pF @ 500V
- Resistance - RDS(On)：170 mOhms
- Power - Max：80 W
- Operating Temperature：-55°C ~ 210°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-257-3
- Supplier Device Package：TO-257
- Grade：-
- Qualification：-
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Overview
The 2N7637-GA is a Silicon Carbide (SiC) Super Junction Transistor manufactured by GeneSiC Semiconductor. It features an N-channel configuration housed in a TO-257-3 through-hole package. The device is rated for a drain-to-source breakdown voltage of 650V and supports a continuous drain current of 7A at case temperatures up to 165°C. Designed for high-temperature operation, it withstands junction temperatures reaching 225°C, making it suitable for demanding power electronics applications requiring robust thermal performance.
Feature Summary
- Utilizes Silicon Carbide material for superior thermal conductivity and high-temperature stability
- Features a Super Junction structure to enhance switching efficiency and reduce conduction losses
- Designed with an N-channel configuration for reliable high-voltage switching operations
Applications
- High-temperature power conversion systems
- Industrial motor drives requiring robust thermal management
- Automotive power electronics under hood environments
Procurement Notes
Verify the manufacturer part number against official GeneSiC Semiconductor documentation to confirm specifications. Note that this component may be listed as obsolete or end-of-life in some distributor catalogs. Ensure compatibility with TO-257-3 mounting requirements and validate thermal limits against your specific application constraints before procurement.
Selection Notes
Select this component when high-temperature tolerance exceeding standard silicon devices is required. The 650V rating suits medium-voltage applications, while the 7A current capacity defines its load handling. Consider the TO-257-3 package for through-hole assembly needs. Evaluate the 225°C junction temperature limit against your system's thermal design to ensure reliability under peak operating conditions.
Part Context
This component belongs to the GeneSiC Semiconductor SiC transistor family, specifically designed for high-power and high-temperature environments. It complements other devices like the 2N7635-GA, offering higher current capabilities within the same voltage class. The series targets applications where traditional silicon devices fail due to thermal limitations, providing a rugged solution for extreme operating conditions.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-references with official GeneSiC Semiconductor resources or authorized distributors for potential equivalents.
