2N834A TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor 2N834A is a single NPN bipolar junction transistor housed in a TO-18-3 through-hole package. It features a collector-emitter voltage of 15 V, a collector-base voltage of 40 V, and an emitter-base voltage of 5 V. The device supports a continuous collector current of 200 mA with a maximum power dissipation of 300 mW. Key electrical characteristics include a gain-bandwidth product of 500 MHz, a DC current gain ranging from 40 to 120 at 10 mA, and a collector-emitter saturation voltage of 250 mV. Operating temperatures span from -65°C to +200°C.

Single Bipolar Transistors Feature Summary

• Single NPN bipolar junction transistor configuration for general-purpose amplification and switching applications
• High-frequency performance capability defined by a 500 MHz gain-bandwidth product
• Robust thermal stability supporting operation up to 200°C maximum junction temperature
• Low saturation voltage characteristic facilitating efficient switching operations

Single Bipolar Transistors Applications

• General-purpose small-signal amplification circuits
• Electronic switching applications requiring fast response times
• High-frequency signal processing stages
• Industrial control systems operating in extreme temperature environments

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TIN/LEAD to ensure compliance with lead-based material requirements. Confirm that the TO-18-3 through-hole package matches the target PCB footprint. Cross-reference the manufacturer datasheet for exact test conditions regarding hFE and VCE(sat) to ensure design margin adequacy. Check for any RoHS exemption documentation if lead-free alternatives are mandated by regulatory standards.

Single Bipolar Transistors Selection Notes

Select this component when high-frequency operation near 500 MHz is required alongside moderate current handling capabilities. The TO-18 metal can package provides superior thermal dissipation compared to plastic equivalents, making it suitable for high-temperature industrial environments. Ensure the circuit design accommodates the 15 V collector-emitter voltage limit and utilizes appropriate base drive currents to achieve the specified 40-120 hFE range.

Single Bipolar Transistors Part Context

The 2N834A belongs to the standard NPN silicon transistor family manufactured by Central Semiconductor Corp. It is designed for rugged performance in military and industrial sectors. The TO-18 case style is a legacy hermetic package offering excellent environmental protection. This part complements other small-signal transistors in the manufacturer's portfolio focused on reliability and wide temperature operation.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and voltage ratings before considering alternative manufacturers. Consult official replacement guides for direct cross-references.