2N918

Single Bipolar Transistors Overview

The Microchip Technology 2N918 is a silicon NPN small-signal bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of 15 V, a collector-base voltage of 30 V, and an emitter-base voltage of 3 V. The device supports a maximum DC collector current of 50 mA with a power dissipation rating of 200 mW. It operates within a temperature range of -65°C to +200°C and utilizes a hermetically sealed LCC-3 package.

Single Bipolar Transistors Feature Summary

• Hermetically sealed ceramic construction for high reliability
• Wide operating temperature range suitable for extreme environments
• Optimized for low-voltage switching and linear amplification

Single Bipolar Transistors Applications

• Military aerospace circuits
• High-reliability industrial control systems
• Harsh environment sensor interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix (e.g., JAN, JANTX) against the procurement requirement, as these denote distinct qualification levels such as MIL-PRF-19500. Confirm that the LCC-3 package matches the PCB footprint. Ensure the order specifies the correct tape-and-reel or bulk packaging if required by assembly equipment. Cross-reference the manufacturer's latest datasheet for any updates on lead times or compliance status.

Single Bipolar Transistors Selection Notes

Select this component when a hermetically sealed NPN BJT is required for high-temperature stability. The 2N918 offers a balance of moderate current handling and robust voltage ratings. Consider the LCC-3 package constraints during layout. Evaluate thermal management needs given the 200 mW dissipation limit in enclosed spaces compared to standard plastic packages.

Single Bipolar Transistors Part Context

This part belongs to the military-grade small-signal transistor family produced by Microchip Technology. It serves as a ruggedized alternative to commercial equivalents, ensuring performance consistency under severe mechanical and thermal stress. The device is integral to designs requiring long-term reliability without failure in critical infrastructure or defense applications.

Single Bipolar Transistors Replacement Considerations

Direct replacements include JAN2N918UB and JAN2N918U. Verify pinout compatibility and electrical parameter margins before substitution. Ensure the substitute meets the same environmental qualification standards.