2N930B TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N930B TIN/LEAD is a silicon PNP epitaxial planar power transistor designed for high-voltage switching and amplification applications. It features a collector-emitter voltage rating of 400V, a continuous collector current of 1A, and a total power dissipation of 80W when mounted on a heat sink. The device utilizes a TO-202AA (TO-3) metal case package with tin/lead plated leads to ensure reliable through-hole integration in industrial circuits. Key electrical characteristics include a DC current gain (hFE) ranging from 20 to 70 at specified test conditions, a collector-base breakdown voltage of 600V, and an emitter-base breakdown voltage of 7V. The component operates within a junction temperature range of -65°C to +200°C, providing robust thermal performance for demanding environments.

Single Bipolar Transistors Feature Summary

• High-voltage capability with a 400V collector-emitter breakdown rating suitable for power supply and motor control circuits.
• Robust thermal management design allowing 80W power dissipation via direct mounting to external heatsinks.
• Epitaxial planar construction ensures stable electrical characteristics and improved reliability under stress.
• Metal TO-3 package provides superior mechanical strength and efficient heat transfer compared to plastic alternatives.

Single Bipolar Transistors Applications

• High-voltage linear and switching power supplies
• Motor control driver stages
• Industrial automation output stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TIN/LEAD' to confirm lead composition, as RoHS-compliant variants may use different plating materials. Confirm the manufacturer's current production status, as legacy TO-3 packages are often subject to long lead times or discontinuation notices. Request the official datasheet to validate the exact hFE binning and thermal resistance values required for your specific thermal design calculations before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage PNP transistor is required for power handling exceeding standard plastic-packaged devices. Ensure the application circuit can accommodate the physical size and mounting requirements of the TO-3 metal case. Verify that the base drive current is sufficient to achieve the desired saturation level given the minimum hFE of 20. Consider the thermal resistance from junction to case when designing the heatsink interface to maintain safe operating temperatures under maximum load conditions.

Single Bipolar Transistors Part Context

The 2N930B belongs to the family of high-voltage silicon PNP power transistors manufactured by Central Semiconductor. These devices are engineered for ruggedness in industrial and commercial power electronics. The TO-3 package is a standard form factor for high-power discrete semiconductors, offering excellent thermal conductivity. This specific model serves as a replacement for older military-grade specifications in modern industrial equipment requiring reliable high-voltage switching.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2N930B?

The maximum collector-emitter voltage (VCEO) is rated at 400V.

Does the 2N930B support surface mount installation?

No, the 2N930B is designed for through-hole mounting using the TO-3 metal case package.

What is the typical power dissipation capacity of this transistor?

The device supports a total power dissipation of 80W when properly mounted to an appropriate heatsink.