Single Bipolar Transistors 2N930UB/TR product image

2N930UB/TR

$19.43
  • Description:TRANS NPN 45V 0.03A UB
  • Series:-

SKU:e372c0a99e66 Category: Brand:

  
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2N930UB/TR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 45V 0.03A UB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N930UB/TR

  • Description:TRANS NPN 45V 0.03A UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):30 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N930UB/TR

2N930UB/TR

Single Bipolar Transistors Overview

The 2N930UB/TR is a small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It is an NPN silicon device designed for general-purpose switching and amplification applications. The component utilizes a TO-72-3 through-hole package configuration. Key electrical specifications include a maximum DC collector current of 50 mA, a collector-emitter voltage rating of 15 V, and a collector-base voltage of 30 V. The emitter-base voltage is rated at 3 V, with a collector-emitter saturation voltage of 400 mV. Power dissipation is limited to 200 mW, and the unit operates within a temperature range of -65°C to +200°C.

Single Bipolar Transistors Feature Summary

  • Utilizes silicon technology for reliable small-signal performance in general-purpose circuits.
  • Features a single NPN transistor configuration housed in a traditional TO-72-3 through-hole package.
  • Designed for operation across an extended industrial temperature range up to +200°C.

Single Bipolar Transistors Applications

  • General-purpose signal amplification
  • Electronic switching circuits
  • Low-power analog applications

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturing lot and compliance documentation against the latest official datasheet before integration. Confirm that the TO-72-3 through-hole form factor aligns with the target PCB design requirements. Ensure that thermal management strategies account for the 200 mW power dissipation limit under all expected operating conditions. Cross-reference the part number with authorized distributors to confirm current availability status.

Single Bipolar Transistors Selection Notes

Select this component when a through-hole NPN BJT with low voltage ratings is required. The 50 mA current capacity and 15 V breakdown voltage define its operational envelope. Consider the TO-72-3 package constraints for board layout. Evaluate the 200 mW power dissipation against thermal constraints. Compare gain characteristics if high linearity is necessary for the specific application circuit.

Single Bipolar Transistors Part Context

This part belongs to Microchip's discrete semiconductor portfolio, specifically within the Bipolar Junction Transistor category. It serves as a fundamental active component for controlling electron flow in electronic systems. The designation indicates a standard commercial grade silicon NPN transistor. It supports legacy designs requiring through-hole mounting solutions.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for compatible equivalents. Verify pinout compatibility and electrical parameter margins before replacing existing components in established designs.

2N930UB/TR2N930UB/TR
$19.43
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