2N930UB

Single Bipolar Transistors Overview

The Microchip Technology 2N930UB is a small-signal NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It utilizes silicon technology and is housed in a TO-72-3 through-hole package. The device supports a maximum DC collector current of 50 mA and operates with a collector-emitter voltage (VCEO) of 15 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 3 V. Power dissipation is rated at 200 mW, with a collector-emitter saturation voltage of 400 mV. The component functions within a temperature range of -65°C to +200°C, featuring a minimum DC current gain (hFE) of 100 at 10 uA/5 V and a maximum hFE of 200 at 3 mA/1 V.

Single Bipolar Transistors Feature Summary

• High thermal stability enabling operation up to +200°C
• Silicon construction for reliable small-signal performance
• Through-hole mounting configuration for robust mechanical integration

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Electronic switching applications requiring high-temperature tolerance
• Military and aerospace electronic systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'UB' against official Microchip documentation to confirm exact binning or qualification standards. Confirm RoHS compliance status directly from the manufacturer's datasheet or product change notifications. Ensure the TO-72-3 package dimensions match the target PCB footprint requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a silicon NPN BJT with a 15 V collector-emitter rating and 50 mA continuous current capability is required. The wide operating temperature range makes it suitable for environments exceeding standard commercial limits. Verify that the 200 mW power dissipation rating aligns with the thermal management strategy of the host circuit design.

Single Bipolar Transistors Part Context

The 2N930 series represents a family of ruggedized silicon NPN transistors historically utilized in demanding environments. The 2N930UB variant specifically denotes a particular manufacturing lot or qualification tier within the Microchip portfolio. These devices are engineered to meet stringent reliability standards often required in defense and space-oriented electronics sectors.

Single Bipolar Transistors Replacement Considerations

Consult official Microchip cross-reference guides for verified equivalents. Generic replacements may not replicate the specific high-temperature ratings or electrical tolerances defined for the UB suffix.