2PB1219AS,115

Single Bipolar Transistors Overview

The Nexperia 2PB1219AS,115 is a PNP general-purpose bipolar transistor housed in the SOT323 (SC-70) surface-mount plastic package. It supports a maximum collector current of 500 mA and a collector-emitter voltage of -50 V. The device features a low collector-emitter saturation voltage of up to -600 mV at -300 mA. DC current gain ranges from 170 to 340 for this specific suffix variant. Thermal resistance from junction to ambient is 625 K/W.

Single Bipolar Transistors Feature Summary

• Designed for high-current switching applications with a maximum continuous collector current of 500 mA.
• Provides low voltage operation capability with a collector-emitter breakdown rating of 50 V.
• Ensures efficient conduction through minimized collector-emitter saturation voltage characteristics.

Single Bipolar Transistors Applications

• General purpose switching circuits
• Amplification stages

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix

Single Bipolar Transistors Selection Notes

Select the AS suffix when a minimum DC current gain of 170 is required. Ensure the design accommodates the SOT323 package thermal limits, specifically the 625 K/W junction-to-ambient resistance. Confirm that the application polarity matches the PNP configuration and that peak currents remain within the specified absolute maximum ratings.

Single Bipolar Transistors Part Context

This component belongs to the 2PB1219A series of PNP transistors manufactured by Nexperia. It serves as the complementary counterpart to the NPN 2PD1820A device. The product line targets discrete semiconductor needs across automotive, industrial, computing, consumer, and wearable markets.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other variants within the 2PB1219A family, such as 2PB1219AQ or 2PB1219AR, provided their respective hFE ranges align with circuit requirements. Verify pinout compatibility within the SOT323 package before substitution.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2PB1219AS variant?

The DC current gain (hFE) for the 2PB1219AS ranges from a minimum of 170 to a maximum of 340, measured at IC = -150 mA and VCE = -10 V.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (VCEsat) is -600 mV, specified at a collector current of -300 mA and a base current of -30 mA.

Which NPN transistor is the complement to this device?

The NPN complement to the 2PB1219A series is the 2PD1820A.