2PB709AQW,115

Single Bipolar Transistors Overview

The NX7002AKW,115 is a surface-mount N-channel MOSFET from Nexperia USA Inc. housed in an SOT-323 package. It features a drain-source voltage of 60 V and a continuous drain current of 170 mA at 25 °C. The device has a maximum gate-source voltage of ±20 V and a power dissipation of 220 mW (Ta) or 1.06 W (Tc). Key electrical parameters include a threshold voltage of 2.1 V max at 250 µA, on-resistance of 4.5 Ω max at 100 mA/10 V, gate charge of 0.43 nC max at 4.5 V, and input capacitance of 17 pF max at 10 V.

Single Bipolar Transistors Feature Summary

• N-channel metal-oxide semiconductor field-effect transistor designed for surface mount applications
• Capable of handling up to 60 V drain-source voltage with low gate charge characteristics
• Operates within a wide junction temperature range extending to 150 °C

Single Bipolar Transistors Applications

• General purpose switching circuits
• Low voltage logic level interfaces
• Battery protection modules

Single Bipolar Transistors Procurement Notes

Verify the specific ordering code against the manufacturer's latest catalog to ensure compatibility with your bill of materials. Confirm that the SOT-323 footprint matches your PCB design guidelines. Check for any recent product change notices regarding marking or packaging updates before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a compact N-channel MOSFET is required for low-current switching tasks. Ensure the operating voltage remains below the 60 V limit and consider thermal management if ambient temperatures exceed standard ratings. Verify that the drive voltage meets the requirements for optimal on-resistance performance.

Single Bipolar Transistors Part Context

This part belongs to the NX7002 series of single MOSFETs manufactured by Nexperia. It is commonly used in portable electronics and consumer devices where space constraints necessitate small surface-mount packages like SOT-323. The series provides reliable performance for general-purpose switching applications.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for compatible alternatives. Ensure any replacement maintains the same pinout, voltage ratings, and package dimensions to avoid redesigning the printed circuit board.

Single Bipolar Transistors FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage is rated at ±20 V.

Is this device suitable for high-frequency switching?

Yes, it features a low input capacitance of 17 pF max at 10 V, which supports efficient switching operations.

What is the typical on-resistance at 10 V gate drive?

The on-resistance is typically 4.5 Ω max when tested at 100 mA drain current and 10 V gate-source voltage.