Single Bipolar Transistors 2PC1815BL,126 product image

2PC1815BL,126

  • Description:TRANS NPN 50V 0.15A TO-92-3
  • Series:-

SKU:1da73c349e38 Category: Brand:

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2PC1815BL,126 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is TRANS NPN 50V 0.15A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2PC1815BL,126

  • Description:TRANS NPN 50V 0.15A TO-92-3
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:350 @ 2mA, 6V
  • Power - Max:500 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2PC1815BL,126

2PC1815BL,126

Single Bipolar Transistors Overview

The NXP 2PC1815BL,126 is an NPN general-purpose bipolar junction transistor housed in a TO-92 (SOT54) plastic package. It supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 150 mA. The BL suffix designates a high DC current gain range of 350 to 700 at IC = 2 mA. Key electrical characteristics include a transition frequency of 80 MHz, a collector capacitance of 3.5 pF, and a total power dissipation of 500 mW.

Single Bipolar Transistors Feature Summary

  • High DC current gain ranging from 350 to 700 for low-current applications
  • Low voltage operation with a 50 V collector-emitter rating
  • Suitable for general-purpose switching and amplification tasks

Single Bipolar Transistors Applications

  • Audio amplifier driver stages
  • General purpose switching circuits
  • Low-voltage amplification applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering code 2PC1815BL,126 against the manufacturer's latest documentation to confirm availability and exact specifications. Ensure that the required hFE binning aligns with the 350–700 range defined for the BL variant. Confirm compliance with RoHS directives and check for any recent product change notifications regarding manufacturing status or pinout definitions before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required for low-current signal processing. The 2PC1815BL variant is specifically chosen over standard versions due to its elevated hFE range of 350 to 700. This makes it suitable for applications demanding significant amplification at low collector currents, such as sensitive audio pre-amplifiers or precision switching logic where base drive efficiency is critical.

Single Bipolar Transistors Part Context

This device belongs to the 2PC1815 series of NPN general-purpose transistors manufactured by NXP Semiconductors. It is functionally complementary to the 2PA1015 PNP transistor. The series utilizes a robust TO-92 plastic package designed for through-hole mounting on printed-circuit boards, providing a compact solution for discrete semiconductor applications requiring reliable performance in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

The 2PA1015 serves as the official PNP complement within the same family. Verify pinout compatibility and thermal resistance requirements when substituting similar TO-92 NPN transistors from other manufacturers.

Single Bipolar Transistors FAQ

What distinguishes the 2PC1815BL from other variants in the series?

The BL suffix indicates a specific DC current gain (hFE) binning range of 350 to 700 at IC = 2 mA, which is higher than the standard 2PC1815 (120–700) or the 2PC1815Y (120–240).

What is the maximum power dissipation capability of this transistor?

The total power dissipation is rated at 500 mW when mounted on an FR4 printed-circuit board at an ambient temperature of 25 °C.

2PC1815BL,1262PC1815BL,126

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