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2PC1815GR,412 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is TRANS NPN 50V 0.15A TO-92-3. Review the specifications below when checking this part for your BOM.
The NXP USA Inc. 2PC1815GR,412 is an NPN general-purpose transistor housed in a TO-92 (SOT54) plastic package. It supports a maximum collector-emitter voltage of 50 V and a continuous DC collector current of 150 mA. The device features a minimum DC current gain (hFE) ranging from 200 to 400 at IC = 2 mA. Key electrical characteristics include a transition frequency of 80 MHz and a collector capacitance of 3.5 pF maximum.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact hFE binning and packaging details. Ensure the component status aligns with current production requirements. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing design specifications.
Select this component when a moderate current gain and low saturation voltage are required for small-signal amplification. The TO-92 package facilitates easy integration into through-hole designs. Consider the PNP complement 2PA1015 if complementary pairs are needed for push-pull configurations.
This device belongs to the 2PC1815 series of NPN general-purpose transistors manufactured by NXP Semiconductors. The series offers various hFE grades, with the GR variant providing a mid-range gain specification. It serves as a fundamental discrete semiconductor component for basic electronic circuit building blocks.
The 2PA1015 is documented as the PNP complement within the same family. Verify pinout compatibility and thermal resistance limits when substituting with other NPN transistors from different manufacturers.
The DC current gain (hFE) for the 2PC1815GR ranges from 200 to 400 when measured at IC = 2 mA and VCE = 6 V.
It has a transition frequency (fT) of 80 MHz, making it suitable for general-purpose switching and audio frequencies but not for high-frequency RF applications.
The total power dissipation is limited to 500 mW at an ambient temperature of 25 °C when mounted on an FR4 printed-circuit board.
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