Single Bipolar Transistors 2SA1013-R-AP product image

2SA1013-R-AP

  • Description:TRANS PNP 160V 1A TO-92MOD
  • Series:-

SKU:627b32104a4e Category: Brand:

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2SA1013-R-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS PNP 160V 1A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1013-R-AP

  • Description:TRANS PNP 160V 1A TO-92MOD
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 200mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:15MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1013-R-AP

2SA1013-R-AP

Single Bipolar Transistors Overview

The MCC 2SA1013-R-AP is a PNP epitaxial silicon transistor housed in a TO-92MOD package. It supports up to 0.9W power dissipation and -1.0A collector current with a -160V collector-base voltage rating. The device operates within a junction temperature range of -55°C to +150°C. The R suffix indicates a DC current gain (hFE) rank of 60-120 at -200mA. It features low leakage currents, a saturation voltage of -1.5V max, and complies with RoHS standards.

Single Bipolar Transistors Feature Summary

  • Utilizes an epitaxial silicon construction for stable performance.
  • Provides high voltage capability suitable for demanding switching applications.
  • Features lead-free finish and epoxy meeting UL 94 V-0 flammability ratings.

Single Bipolar Transistors Applications

  • Color TV vertical deflection output circuits
  • Power switching applications

Single Bipolar Transistors Procurement Notes

Verify the component authenticity by checking for the specific MCC branding and markings on the TO-92MOD casing. Ensure the ordering suffix matches the required binning; the '-R' suffix designates the specific hFE gain range of 60-120. Confirm the '-AP' suffix corresponds to the requested ammo pack packaging configuration before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -160V breakdown voltage and -1.0A continuous current capacity is required. The -R suffix must be chosen specifically if the application circuit demands a DC current gain between 60 and 120. Consider the TO-92MOD package dimensions and thermal resistance characteristics for proper heat dissipation in the target design.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1013 series manufactured by Micro Commercial Components. The series includes variants differentiated by gain ranking suffixes such as O, Y, and R. These transistors are designed primarily for general-purpose switching and output stages in consumer electronics, particularly television sets.

Single Bipolar Transistors Replacement Considerations

Consult datasheets for other PNP transistors rated for -160V and -1.0A. Verify that potential substitutes match the TO-92MOD footprint and have compatible hFE ranges. Ensure the replacement device meets the same thermal and electrical safety standards required by the original design.

Single Bipolar Transistors FAQ

What does the 'R' suffix indicate for this transistor?

The 'R' suffix designates the DC current gain (hFE) rank, specifying a range of 60 to 120 when measured at -200mA collector current.

Is this component compliant with environmental regulations?

Yes, the device features a lead-free finish and is RoHS compliant, as indicated by the standard product designation.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is -160Vdc under specified test conditions.

2SA1013-R-AP2SA1013-R-AP

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