2SA1013-Y-BP

Single Bipolar Transistors Overview

The MCC 2SA1013-Y-BP is a PNP epitaxial silicon transistor in a TO-92MOD package. It supports a collector current of -1.0A and a collector-emitter breakdown voltage of -160V. The device dissipates 0.9Watts at 25°C, with an operating junction temperature range from -55°C to +150°C. The DC current gain (hFE) for the Y rank ranges from 200 to 300 at IC=-200mA and VCE=-5V. It features a collector-base breakdown voltage of -160V and a collector cutoff current of -1.0µA.

Single Bipolar Transistors Feature Summary

• Capable of handling 0.9 Watts of power dissipation
• Supports high collector current up to -1.0 Ampere
• Provides high voltage isolation with -160V collector-emitter breakdown
• Epoxy formulation meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• Color TV audio output circuits
• Color TV vertical deflection output stages
• General-purpose switching applications requiring high voltage tolerance

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration when ordering. The '-BP' suffix indicates bulk packaging containing 50,000 pieces per carton. Confirm RoHS compliance status based on the 'P' suffix designation if required by your manufacturing standards. Ensure the procurement channel is authorized to guarantee genuine parts and full traceability as per manufacturer guidelines.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP transistor with a minimum -160V collector-emitter breakdown voltage. The Y rank provides a guaranteed DC current gain between 200 and 300, suitable for amplification tasks. Verify that the thermal management system can handle the 0.9W power dissipation limit within the specified -55°C to +150°C operating temperature range.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1013 series manufactured by Micro Commercial Components. It is a standard small-signal PNP transistor designed for general-purpose use. The datasheet specifies electrical characteristics measured at 25°C unless otherwise noted. The device utilizes an epitaxial silicon construction housed in a plastic TO-92MOD package.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors with similar -160V V(BR)CEO and -1.0A IC ratings. Verify pinout compatibility (Emitter, Base, Collector) and ensure the replacement package matches the TO-92MOD dimensions. Check that the alternative device meets the required hFE gain range and power dissipation capabilities.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SA1013-Y variant?

The DC current gain (hFE) for the Y rank is classified between 200 and 300, measured at IC=-200mA and VCE=-5V.

Does the 2SA1013-Y-BP support halogen-free requirements?

Halogen-free versions are available upon request by adding the '-HF' suffix to the part number, such as 2SA1013-Y-BP-HF.

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (V(BR)CBO) is -160V, measured at IC=-100µA and IE=0.