2SA1020-O(F,M)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1020-O(F,M) is a PNP silicon epitaxial transistor utilizing the PCT process. It features a maximum collector current of -2 A, a collector-emitter breakdown voltage of -50 V, and a power dissipation rating of 900 mW. The device offers a transition frequency of 100 MHz and a storage time of 1.0 μs. DC current gain ranges from 70 to 140 for the 'O' classification. It is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Designed for power amplifier applications with low collector saturation voltage.
• Capable of high-speed switching operations.
• Complementary to the 2SC2655 NPN transistor.

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status by checking for an underlined lot number on the component marking or contacting the manufacturer directly. Confirm that the 'O' suffix corresponds to the specified hFE range of 70 to 140. Ensure the TO-92MOD package dimensions match your PCB layout requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a high-current PNP transistor with a 50 V collector-emitter voltage rating. The 900 mW power dissipation capability supports moderate power handling needs. Verify that the specific hFE bin (O: 70–140) meets the biasing requirements of the target circuit design.

Single Bipolar Transistors Part Context

This component belongs to the 2SA1020 series of PNP transistors manufactured by Toshiba Semiconductor and Storage. It is part of a complementary pair designed alongside the 2SC2655 NPN transistor. The series utilizes the PCT process to achieve specific electrical characteristics suitable for audio and switching applications.

Single Bipolar Transistors Replacement Considerations

The 2SC2655 is documented as the complementary NPN transistor for this series. Other manufacturers produce equivalents under the generic 2SA1020 designation, but verification of pinout and absolute maximum ratings is required.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 'O' classification?

For the 'O' classification, the DC current gain (hFE) ranges from 70 to 140 when measured at IC = -0.5 A and VCE = -2 V.

Is this transistor compatible with the 2SC2655?

Yes, the datasheet explicitly states that the 2SA1020 is complementary to the 2SC2655.

What is the typical storage time for this device?

The typical storage time (tstg) is 1.0 μs under standard test conditions.