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2SA1020-Y,T6F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.
The Toshiba Semiconductor and Storage 2SA1020-Y,T6F(J) is a PNP silicon epitaxial transistor utilizing the PCT process. It features a maximum collector current of 2 A, a collector-emitter breakdown voltage of 50 V, and a power dissipation rating of 900 mW. The device exhibits a low collector saturation voltage of -0.5 V at 1 A and a transition frequency of 100 MHz. It operates within a junction temperature range up to 150 °C and is housed in a JEDEC TO-92MOD package.
Verify RoHS compatibility status by contacting the manufacturer or authorized distributor, as indicated by datasheet markings. Confirm that the ordering suffix corresponds to the required environmental compliance and packaging format. Ensure design reliability accounts for derating concepts under heavy loads.
Select this component for general electronics applications requiring high current handling and fast switching speeds. Verify suitability against absolute maximum ratings for specific operating conditions. Consider complementary pairing with the 2SC2655 NPN transistor for push-pull configurations.
This component belongs to the 2SA1020 series of PNP transistors manufactured by Toshiba Semiconductor and Storage. The series is designed for use in power amplification and switching roles within electronic circuits. The specific model variant includes defined electrical characteristics optimized for performance at standard ambient temperatures.
The datasheet identifies the 2SC2655 as the complementary NPN transistor for this device family.
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