2SA1020-Y(T6FJT,AF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1020-Y(T6FJT,AF) is a PNP silicon epitaxial transistor utilizing the PCT process. It features a maximum collector current of -2 A and a collector-emitter breakdown voltage of -50 V. The device supports a collector power dissipation of 900 mW at 25°C ambient temperature. Electrical characteristics include a DC current gain (hFE) ranging from 70 to 240 for the Y grade, with a transition frequency of 100 MHz. The component is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Low collector saturation voltage of -0.5 V maximum at -1 A collector current
• High-speed switching capability with a typical storage time of 1.0 μs
• Designed as a complementary pair to the 2SC2655 NPN transistor

Single Bipolar Transistors Applications

• Audio frequency power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by contacting the manufacturer or authorized distributor, as datasheet markings indicate specific environmental compliance requirements. Confirm that the ordering suffix matches the required binning and packaging specifications. Ensure design parameters remain within absolute maximum ratings to maintain reliability standards defined in the Toshiba Semiconductor Reliability Handbook.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling up to 2 A with low saturation voltage. The specified hFE range suits applications needing consistent amplification without excessive base drive current. Consider thermal derating curves when operating above 25°C ambient temperature to ensure the junction temperature does not exceed 150°C during continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1020 series of PNP transistors manufactured using Toshiba's PCT process technology. The series is engineered for robust performance in power amplifier and switching roles. The specific model variant utilizes standard through-hole packaging suitable for general electronics assembly.

Single Bipolar Transistors Replacement Considerations

The 2SC2655 is documented as the complementary NPN counterpart. Verify pinout compatibility and electrical limits before substituting with other generic PNP transistors offering similar voltage and current ratings.