2SA1020-Y(T6TOJ,FM

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1020-Y(T6TOJ,FM) is a PNP silicon epitaxial transistor utilizing the PCT process. It features a maximum collector current of -2 A and a collector-emitter breakdown voltage of -50 V. The device provides high power dissipation capability of 900 mW and low saturation voltage of -0.5 V at -1 A. Electrical characteristics include a DC current gain (hFE) range of 70 to 240 for the Y grade, with a transition frequency of 100 MHz. The component is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Designed for power amplifier applications with high collector power dissipation capabilities
• Features low collector saturation voltage for efficient switching performance
• Offers high-speed switching characteristics with typical storage time of 1.0 μs
• Complementary to the 2SC2655 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and environmental compliance status. Confirm RoHS compatibility directly with the manufacturer or authorized distributors as indicated by the lot marking. Ensure the selected hFE bin matches the circuit requirements before procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current handling up to 2 A and robust power dissipation in a through-hole package. Consider the complementary 2SC2655 for push-pull configurations. Evaluate thermal derating requirements based on the 900 mW limit and junction temperature specifications during circuit design.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP bipolar junction transistors manufactured by Toshiba Semiconductor and Storage. The series utilizes epitaxial planar technology optimized for audio and general-purpose power applications. The TO-92MOD package provides a standard footprint for prototyping and production electronics.

Single Bipolar Transistors Replacement Considerations

The 2SC2655 is documented as the complementary NPN transistor for this device family.