Single Bipolar Transistors 2SA1020A,NSEIKIF(J product image

2SA1020A,NSEIKIF(J

  • Description:TRANS PNP 50V 2A TO-92MOD
  • Series:-

SKU:4354005248db Category: Brand:

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2SA1020A,NSEIKIF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1020A,NSEIKIF(J

  • Description:TRANS PNP 50V 2A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1020A,NSEIKIF(J

2SA1020A,NSEIKIF(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1020A,NSEIKIF(J is a PNP silicon epitaxial transistor manufactured using the PCT process. It features a maximum collector current of 2 A, a collector-emitter breakdown voltage of 50 V, and a collector power dissipation of 900 mW. The device exhibits a low collector saturation voltage of -0.5 V at 1 A and a transition frequency of 100 MHz. It utilizes a JEDEC TO-92MOD package with three pins.

Single Bipolar Transistors Feature Summary

  • Designed for power amplifier applications
  • Optimized for high-speed switching operations
  • Complementary to the 2SC2655 NPN transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • High-speed power switching applications

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the exact requested configuration. Confirm RoHS compatibility status directly with the manufacturer or authorized distributor, as environmental compliance depends on specific production batches and markings. Ensure the component meets all absolute maximum ratings for your specific operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor capable of handling up to 2 A continuous collector current is required. It is suitable for designs needing a collector-emitter breakdown voltage of 50 V and a transition frequency of 100 MHz. Consider its complementary relationship with the 2SC2655 for push-pull configurations.

Single Bipolar Transistors Part Context

This component belongs to the 2SA1020 series of PNP transistors produced by Toshiba Semiconductor and Storage. These devices are engineered for general electronics applications, including computers, office equipment, and home appliances. They are not intended for use in nuclear, aerospace, medical, or automotive safety systems.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC2655 as the complementary NPN transistor for this device. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the typical storage time for the 2SA1020?

The typical storage time (tstg) is 1.0 μs.

What is the minimum DC current gain at a collector current of 1.5 A?

The minimum DC current gain (hFE) is 40 when tested at VCE = -2 V and IC = -1.5 A.

What is the maximum base current rating?

The absolute maximum base current (IB) rating is -0.2 A.

2SA1020A,NSEIKIF(J2SA1020A,NSEIKIF(J

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