2SA1083-E-AP

Single Bipolar Transistors Overview

The MCC 2SA1083-E-AP is a PNP silicon plastic-encapsulated transistor designed for general-purpose switching and amplification applications. It features a collector current of -0.1A and a collector-base voltage of -60V, with a power dissipation capability of 0.4Watts. The device operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 400 to 800 for the 'E' rank, a collector-emitter saturation voltage of -0.2Vdc at specified currents, and a transition frequency of 90MHz typical. The component utilizes a TO-92 package.

Single Bipolar Transistors Feature Summary

• Capable of handling 0.4 Watts of power dissipation in a compact plastic-encapsulated form factor.
• Provides high DC current gain suitable for efficient signal amplification tasks.
• Features robust thermal stability allowing operation across extended temperature ranges.
• Constructed with epoxy material meeting UL 94 V-0 flammability ratings.

Single Bipolar Transistors Applications

• General-purpose low-power switching circuits
• Audio pre-amplifier stages
• Driver circuits for small loads

Single Bipolar Transistors Procurement Notes

Verify the specific suffix '-AP' confirms ammo pack packaging when sourcing. Ensure the 'E' designation matches the required hFE gain bin (400-800). Confirm RoHS compliance status if environmental regulations apply to your assembly process. Check for authorized distributor channels to mitigate counterfeit risks as advised by the manufacturer.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate voltage ratings and high current gain is required. The TO-92 package suits through-hole mounting on standard PCBs. Consider the -60V breakdown voltage limits for circuit design. Verify that the 0.4W power dissipation aligns with the thermal management capabilities of the final enclosure.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1083 series of PNP transistors manufactured by Micro Commercial Components. The series offers various gain ranks and packaging options. The 2SA1083-E variant specifically targets applications requiring higher current gain compared to lower-ranked counterparts in the same family.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the PNP configuration, TO-92 package, and similar electrical parameters (-0.1A Ic, -60V Vceo). Verify pinout compatibility before substitution. Generic replacements should be sourced from reputable manufacturers to ensure reliability.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SA1083-E?

The DC current gain (hFE) for the 2SA1083-E rank ranges from 400 to 800 when measured at IC=-2.0mAdc and VCE=-12.0Vdc.

Is the 2SA1083-E halogen-free?

Standard versions are not explicitly stated as halogen-free. Halogen-free availability requires adding the '-HF' suffix to the part number.

What is the maximum operating junction temperature?

The operating and storage junction temperature range extends up to +150°C.