2SA1162-O,LF

Single Bipolar Transistors Overview

The 2SA1162-O,LF is a single PNP silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It is designed for audio frequency general-purpose amplifier applications. The device features high voltage and current capabilities with a collector-emitter breakdown voltage of -50 V and a maximum continuous collector current of -150 mA. It offers excellent hFE linearity, defined as a ratio of 0.95 (typical) between currents of -0.1 mA and -2 mA. The component provides a high DC current gain range of 70 to 400 and low noise performance with a typical noise figure of 1 dB. It is packaged in the small S-Mini (SC-59-3) form factor.

Single Bipolar Transistors Feature Summary

• Engineered for audio frequency general-purpose amplification tasks
• Delivers excellent hFE linearity across specified operating currents
• Provides low noise performance suitable for sensitive signal stages
• Complements the 2SC2712 NPN transistor in push-pull configurations

Single Bipolar Transistors Applications

• Audio frequency general-purpose amplifiers
• Low noise signal processing circuits
• Push-pull amplifier stages paired with complementary NPN devices

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'O' against official Toshiba documentation to confirm pinout and electrical tolerances differ from standard variants like 'GR'. Ensure the component meets AEC-Q101 qualification requirements if automotive application is intended, as this depends on the specific manufacturing lot and variant designation. Confirm RoHS compliance status through the manufacturer's latest environmental declaration.

Single Bipolar Transistors Selection Notes

Select this component when designing audio amplifiers requiring high voltage handling within a compact surface-mount footprint. The device is appropriate for circuits demanding stable current gain linearity and minimal noise introduction. Consider its complementary relationship with the 2SC2712 for balanced output stages. Verify that the SC-59-3 package dimensions fit the target PCB layout constraints.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1162 series of silicon PNP epitaxial transistors utilizing Toshiba's PCT process. The series is characterized by its suitability for audio applications due to low noise and linear gain characteristics. The component represents a small-package solution for general-purpose amplification, offering a balance of performance metrics within a miniature physical envelope.

Single Bipolar Transistors Replacement Considerations

The 2SC2712 is documented as the complementary NPN counterpart for circuit design purposes. No direct public substitute part numbers are confirmed for replacement. Verify compatibility with existing circuit parameters before substituting with other PNP transistors.