2SA1162-O,LXHF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1162-O,LXHF is a PNP silicon epitaxial planar transistor designed for audio frequency general-purpose amplifier applications. It utilizes the PCT process to achieve high voltage and current capabilities, specifically rated at -50 V collector-emitter voltage and -150 mA maximum collector current. The device features excellent hFE linearity with a typical ratio of 0.95 between low and medium currents, alongside a high DC current gain range of 70 to 400. It offers low noise performance with a typical noise figure of 1 dB and serves as the complementary counterpart to the 2SC2712 NPN transistor.

Single Bipolar Transistors Feature Summary

• Utilizes PCT process technology for high voltage and high current handling in a small package
• Provides excellent hFE linearity across varying collector currents
• Delivers low noise characteristics suitable for sensitive audio circuits
• Functions as the complementary pair to the 2SC2712 NPN transistor

Single Bipolar Transistors Applications

• Audio frequency general-purpose amplifiers
• Low noise signal processing stages
• Complementary push-pull output stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix LXHF against official Toshiba documentation to confirm packaging details and compliance status. Ensure the component matches the required pinout and thermal characteristics for the intended design. Cross-reference the manufacturer part number with authorized distributors to confirm authenticity and availability. Check for any specific handling requirements related to the surface mount package type.

Single Bipolar Transistors Selection Notes

Select this component when designing audio amplifiers requiring a PNP transistor with high linearity and low noise. It is appropriate for applications needing a complementary match to the 2SC2712. Consider its -50V rating and -150mA current limit for circuit constraints. Evaluate the small package size against available board space. Verify that the hFE range meets the biasing requirements of the specific amplifier topology.

Single Bipolar Transistors Part Context

The 2SA1162 series belongs to Toshiba's lineup of silicon PNP epitaxial transistors optimized for audio applications. These devices are engineered using the PCT process to balance performance metrics like gain, noise, and breakdown voltage. The series includes various suffixes indicating different packaging or testing options, all sharing the core electrical characteristics defined by the base 2SA1162 specification.

Single Bipolar Transistors Replacement Considerations

The 2SC2712 is documented as the complementary NPN transistor for this series. Direct replacements should be verified against official Toshiba substitution lists. Generic equivalents may not replicate the specific hFE linearity or noise figure characteristics required for precision audio applications.