2SA1162-Y,LXHF

Single Bipolar Transistors Overview

The 2SA1162-Y,LXHF is a small signal PNP silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of -50 V and a maximum collector current of -150 mA. The device offers a high DC current gain (hFE) ranging from 70 to 400, with excellent linearity where the ratio hFE(-0.1 mA)/hFE(-2 mA) is typically 0.95. It is designed for low noise applications, achieving a noise figure of 1 dB typical at 10 dB maximum. The component utilizes a surface-mount S-Mini package.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability with -50 V collector-emitter rating
• Excellent hFE linearity ensuring consistent gain across current levels
• Low noise performance suitable for sensitive audio frequency amplification

Single Bipolar Transistors Applications

• Audio frequency general purpose amplifier circuits
• Low noise signal processing stages
• Complementary pairing with NPN transistors such as the 2SC2712

Single Bipolar Transistors Procurement Notes

Verify the specific suffix LXHF against official Toshiba documentation to confirm exact binning or packaging specifications. Ensure compatibility with the required hFE range and noise figure standards for your design. Cross-reference the datasheet revision date to confirm parameter validity. Confirm RoHS compliance status if required for your manufacturing process.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP transistor with high linearity and low noise characteristics in a compact surface-mount form factor. Consider its complementary relationship with the 2SC2712 NPN transistor for balanced push-pull configurations. Evaluate the -50 V voltage rating against circuit supply requirements to ensure adequate headroom.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's series of silicon PNP epitaxial transistors utilizing the PCT process. It is categorized as a small signal bipolar transistor intended for general-purpose amplification. The device is distinct from power transistors like the 2SC4172, focusing instead on precision and noise performance rather than high current handling.

Single Bipolar Transistors Replacement Considerations

The 2SC2712 is documented as the complementary NPN counterpart. Direct substitutes are not explicitly listed in the provided data; verify equivalent parameters such as hFE range, noise figure, and package type when sourcing alternatives.