2SA1163-GR,LF

Single Bipolar Transistors Overview

The Toshiba 2SA1163-GR,LF is a silicon PNP epitaxial transistor designed for audio frequency general-purpose amplifier applications. It features a collector-emitter voltage of −120 V and a maximum collector current of −100 mA. The device provides a high DC current gain (hFE) ranging from 200 to 700, with the GR suffix specifying a range of 200 to 400. It exhibits excellent hFE linearity and low noise characteristics, with a typical noise figure of 1 dB. Packaged in a compact JEDEC TO-236MOD (SC-59) surface-mount format, it is AEC-Q101 qualified.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability of −120 V for robust operation
• Excellent hFE linearity ensuring consistent amplification performance
• Low noise figure suitable for sensitive audio signal processing
• AEC-Q101 qualification for automotive reliability standards

Single Bipolar Transistors Applications

• Audio frequency general-purpose amplifiers
• Automotive electronic circuits requiring AEC-Q101 compliance
• Complementary pairing with 2SC2713 NPN transistors

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the hFE binning classification. The GR suffix indicates a minimum hFE of 200 and a maximum of 400. Confirm RoHS compatibility and lead-free status by checking the part number ending in LF. Ensure design parameters respect the absolute maximum ratings, particularly the junction temperature limits which vary based on the presence or absence of the LF suffix.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage PNP transistor with low noise is required for audio applications. The GR variant offers a broader gain range compared to the BL version. Consider the thermal derating requirements if operating near the maximum power dissipation limit of 200 mW on an FR4 board. Verify that the transition frequency of 100 MHz meets the bandwidth needs of the target circuit.

Single Bipolar Transistors Part Context

This device belongs to the Toshiba 2SA series of silicon PNP epitaxial transistors manufactured using the PCT process. It serves as the complementary counterpart to the 2SC2713 NPN transistor. The product has been in commercial production since December 1982, indicating long-term availability and established manufacturing processes for general-purpose amplifier designs.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC2713 as the complementary device. No direct substitute part numbers are listed in the official documentation. Cross-referencing requires matching the −120 V rating, −100 mA current capacity, SC-59 package, and AEC-Q101 qualification.

Single Bipolar Transistors FAQ

What is the difference between the GR and BL suffixes?

The suffix indicates the DC current gain (hFE) classification. The GR suffix specifies an hFE range of 200 to 400, while the BL suffix specifies a range of 350 to 700.

Is this transistor qualified for automotive use?

Yes, the 2SA1163 is AEC-Q101 qualified, making it suitable for automotive electronic applications.

What is the typical noise figure of this device?

The typical noise figure is 1 dB, with a maximum specified noise figure of 10 dB under standard test conditions.