2SA1182-GR,LF

Single Bipolar Transistors Overview

The 2SA1182-GR,LF is a silicon PNP epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is housed in a USM (Small Outline) surface-mount package designed for low-frequency amplifier applications. Key electrical characteristics include a collector-emitter breakdown voltage of 120V, a maximum collector current of 0.1A, and a power dissipation rating of 0.1W. The device features a minimum DC current gain (hFE) of 200 and is optimized for low noise performance.

Single Bipolar Transistors Feature Summary

• Optimized for low-noise operation in audio and signal processing circuits
• Designed specifically for low-frequency amplification tasks
• Utilizes a compact surface-mount USM package for automated assembly

Single Bipolar Transistors Applications

• Low-frequency amplifier stages
• Audio signal processing circuits
• General-purpose small-signal amplification

Single Bipolar Transistors Procurement Notes

Verify the specific suffix GR against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure the component meets RoHS compliance requirements as indicated by the LF designation. Cross-reference the manufacturer's latest datasheet revision to confirm pinout compatibility and thermal management guidelines before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage handling capability combined with low noise characteristics. The 120V collector-emitter breakdown voltage allows for robust operation in higher voltage signal paths. The low power dissipation rating necessitates careful thermal design and heat sinking considerations in dense PCB layouts or high-duty-cycle applications.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of bipolar junction transistors intended for discrete semiconductor applications. The USM package provides a space-saving solution compared to traditional through-hole technologies. It serves as a specialized alternative for designs prioritizing signal integrity and low-frequency performance over high-power switching capabilities.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the 120V Vceo, 0.1A Ic, and USM package form factor. Verify that any replacement maintains equivalent low-noise specifications and hFE ranges suitable for the original amplifier design context.