2SA1313-O(TE85L,F)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1313-O(TE85L,F) is a silicon PNP epitaxial transistor manufactured using the PCT process. It features an SOT-23 (TO-236MOD/SC-59) package with a typical weight of 0.012 g. The device provides a minimum collector-emitter voltage (VCEO) of -50 V and a maximum collector current (IC) of -500 mA. Electrical characteristics include a DC current gain (hFE) range of 70 to 240, a transition frequency (fT) of 200 MHz, and a collector power dissipation of 200 mW.

Single Bipolar Transistors Feature Summary

• Excellent hFE linearity for audio applications
• High voltage rating of -50 V minimum
• Complementary to the 2SC3325 NPN transistor

Single Bipolar Transistors Applications

• Audio frequency low power amplifier circuits
• Driver stage amplification
• General switching applications

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix TE85L,F corresponds to the standard tape-and-reel packaging configuration specified by Toshiba Semiconductor and Storage. Confirm RoHS compliance status directly with the manufacturer or authorized distributor, as environmental declarations are subject to change. Ensure the component matches the JEDEC TO-236MOD physical dimensions for PCB footprint compatibility.

Single Bipolar Transistors Selection Notes

Select this component when designing audio frequency low power amplifiers requiring high voltage tolerance and excellent current gain linearity. The device serves as the complementary match to the 2SC3325 NPN transistor. Consider the 200 mW power dissipation limit and the -50 V breakdown voltage when defining operating conditions for driver stages or switching loads.

Single Bipolar Transistors Part Context

The 2SA1313 is a general-purpose small signal PNP transistor introduced in December 1982. It utilizes Toshiba's PCT (Phase Change Transistor) epitaxial process technology. The component is widely recognized for its use in audio equipment and consumer electronics where compact surface-mount packaging and reliable amplification performance are required.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC3325 as the complementary NPN transistor for this component. No other direct substitute part numbers are documented in the official specifications.

Single Bipolar Transistors FAQ

What is the minimum DC current gain (hFE) at high collector current?

The minimum DC current gain (hFE) is 25 when measured at a collector-emitter voltage of -6 V and a collector current of -400 mA.

Does the 2SA1313 support high-frequency operation?

Yes, the device has a transition frequency (fT) of 200 MHz when tested at a collector-emitter voltage of -6 V and a collector current of -20 mA.

What is the maximum allowable base current?

The absolute maximum rating for base current (IB) is -50 mA at an ambient temperature of 25°C.