2SA1315-Y,HOF(M

Single Bipolar Transistors Overview

The Toshiba 2SA1315-Y,HOF(M is a silicon PNP epitaxial planar transistor utilizing the PCT process, housed in a TO-92MOD package. It features a collector-emitter voltage of -80 V and a continuous collector current rating of -2 A. The device offers a low collector saturation voltage of -0.5 V maximum at -1 A and a transition frequency of 80 MHz. The 'Y' suffix indicates a DC current gain (hFE) range of 120 to 240 at -0.5 A. Designed for power amplifier and switching applications, it operates with a junction temperature up to 150 °C.

Single Bipolar Transistors Feature Summary

• Utilizes an epitaxial planar structure for enhanced performance
• Provides high-speed switching capabilities with short storage times
• Features low collector saturation voltage for efficient operation
• Designed as a complementary pair to the 2SC3328 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as markings may vary. Confirm that the component meets the required hFE classification for the intended circuit design. Review the manufacturer's reliability handbook for derating guidelines under heavy load conditions to ensure long-term operational stability.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a robust PNP transistor with high voltage tolerance and moderate current handling. Ensure the thermal management strategy accommodates the 900 mW power dissipation limit. Verify that the base drive current requirements align with the specified saturation characteristics. Consider the complementary 2SC3328 if a matched push-pull configuration is necessary for the application.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP transistors manufactured by Toshiba Semiconductor. These devices are engineered for general electronics applications, including computers, office equipment, and home appliances. The series emphasizes reliability and performance within standard operating limits, serving as a fundamental discrete semiconductor component for analog and digital switching tasks.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC3328 as the complementary NPN transistor for this device. No other direct substitute part numbers are documented in the provided source material.