2SA1370D-AE

$0.15

Description：TRANS PNP 200V 0.1A 3-MP
Series：-

SKU:50f589e88ee0 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

2SA1370D-AE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 200V 0.1A 3-MP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1370D-AE

Description：TRANS PNP 200V 0.1A 3-MP
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：200 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 2mA, 20mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 10V
Power - Max：1 W
Frequency - Transition：150MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：3-MP
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1370D-AE

2SA1370D-AE

Single Bipolar Transistors Overview

The onsemi 2SA1370D-AE is a small signal PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a single-element silicon construction housed in a TO-92 cylindrical plastic package with three through-hole terminals. The device supports a maximum collector current of 0.1 A and offers a high collector-emitter breakdown voltage of 200 V, ensuring robust performance in low-power circuits. With a minimum DC current gain (hFE) of 100 and a maximum operating temperature of 150 °C, it provides reliable operation across standard industrial and consumer environments.

Single Bipolar Transistors Feature Summary

High voltage tolerance suitable for demanding circuit topologies
Robust thermal stability for elevated temperature operations
Standardized through-hole packaging for easy integration

Single Bipolar Transistors Applications

General-purpose amplification stages
Low-current switching circuits
Consumer electronic control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'AE' against official manufacturer documentation to confirm exact binning or testing criteria. Ensure the procurement channel sources directly from authorized distributors to guarantee component authenticity. Confirm that the TO-92 package variant matches the required mechanical constraints for the target assembly process.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 200 V breakdown capability is required in a compact through-hole form factor. Consider the 0.1 A current limit and 1 W power dissipation rating during thermal design. Verify compatibility with the target circuit's base drive requirements given the specified hFE range.

Single Bipolar Transistors Part Context

This device belongs to the broader category of small signal bipolar transistors manufactured by onsemi. It serves as a discrete semiconductor solution within the company's extensive portfolio of passive and active components. The part is engineered to meet standard industry specifications for reliability and electrical performance in mass-produced electronics.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements must match the PNP configuration, TO-92 package, and 200 V / 0.1 A ratings. Verify pinout compatibility before implementation.