2SA1382,T6MIBF(J

Description：TRANS PNP 50V 2A TO-92MOD
Series：-

SKU:9469dd01a796 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA1382,T6MIBF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1382,T6MIBF(J

Description：TRANS PNP 50V 2A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 33mA, 1A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 500mA, 2V
Power - Max：900 mW
Frequency - Transition：110MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1382,T6MIBF(J

2SA1382,T6MIBF(J

Single Bipolar Transistors Overview

The Toshiba 2SA1382 is a silicon PNP epitaxial planar transistor manufactured using the PCT process. It features a TO-92MOD package with three pins and a collector connected to the case. The device supports a maximum collector current of 2 A and a peak current of 4 A, with a collector-emitter voltage rating of -50 V. Key electrical characteristics include a DC current gain (hFE) ranging from 150 to 400 at -0.5 A, a saturation voltage of -0.5 V max at -1 A, and a transition frequency of 110 MHz. The storage time is typically 1.0 μs.

Single Bipolar Transistors Feature Summary

High DC current gain for efficient signal amplification
Low collector saturation voltage for reduced power loss
Fast switching speed suitable for high-frequency applications

Single Bipolar Transistors Applications

Audio frequency power amplifier circuits
High-speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the component matches the JEDEC TO-92MOD physical dimensions and pinout configuration required by the target design specifications before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high current gain and fast switching capabilities is required in a compact through-hole package. Ensure the application operates within the absolute maximum ratings, particularly the 900 mW power dissipation limit and the -50 V voltage threshold. Consider thermal derating requirements for continuous operation at elevated ambient temperatures.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SA series of general-purpose silicon PNP transistors. It utilizes an epitaxial planar construction designed for robust performance in consumer electronics and industrial control systems. The device is optimized for applications requiring reliable switching and amplification within standard voltage and current limits.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference data for verified substitute part numbers. Do not assume functional equivalence based solely on package type or generic specifications without verifying electrical parameters against the original datasheet.