2SA1416S-TD-E

Single Bipolar Transistors Overview

The onsemi 2SA1416S-TD-E is a PNP bipolar junction transistor (BJT) manufactured using FBET and MBIT processes. It features a collector-emitter voltage of -100 V, a collector-base voltage of -120 V, and an emitter-base voltage of -6 V. The device supports a continuous collector current of -1 A and a pulse current of -2 A. Power dissipation reaches 500 mW at ambient temperature, extending to 1.3 W when mounted on a ceramic substrate. The gain-bandwidth product is 120 MHz, with switching times including turn-on at 80 ns and fall time at 50 ns.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for high breakdown voltage and large current capacity
• Provides fast switching speed suitable for high-density applications
• Features ultrasmall SOT-89/PCP-1 packaging for compact hybrid IC designs

Single Bipolar Transistors Applications

• High-density small-sized hybrid integrated circuits
• General-purpose switching applications requiring low saturation voltage
• Power management circuits utilizing single PNP configurations

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TD-E' against official documentation to confirm tape and reel packaging and lead-free compliance. Confirm that the ordering code matches the required hFE rank (R, S, or T) as performance varies by classification. Ensure the application environment respects the absolute maximum ratings for junction temperature and power dissipation limits.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a single PNP transistor with a -100 V rating and -1 A current capability. Consider the SOT-89 package dimensions for board space constraints. Evaluate thermal requirements carefully, as power dissipation increases significantly only when mounted on specific ceramic substrates rather than standard PCBs.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1416 series, which includes complementary NPN devices like the 2SC3646. Manufactured by onsemi, these transistors are designed for general-purpose use in electronic circuits. The series utilizes advanced semiconductor processes to achieve low saturation voltages and fast switching characteristics within a compact surface-mount footprint.

Single Bipolar Transistors Replacement Considerations

Check for direct substitutes such as the 2SA1416T-TD-E, which shares the same electrical specifications but may differ in hFE ranking. Verify pinout compatibility and package dimensions before substitution.