2SA1416T-TD-E

Single Bipolar Transistors Overview

The onsemi 2SA1416T-TD-E is a PNP bipolar junction transistor (BJT) in a PCP-3 surface-mount package. It features a collector-emitter voltage of -100 V, a collector-base voltage of -120 V, and a continuous collector current of -1 A. The device has a maximum power dissipation of 500 mW at 25°C, rising to 1.3 W on a ceramic substrate. Key electrical characteristics include a minimum DC current gain (hFE) of 100 and a gain-bandwidth product (fT) of 120 MHz. Operating temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for high breakdown voltage and large current capacity.
• Features fast switching speed with low saturation voltages.
• Ultrasmall size facilitates high-density small-sized hybrid IC designs.

Single Bipolar Transistors Applications

• High-density hybrid integrated circuits
• General-purpose switching applications requiring fast response
• Power management circuits within specified thermal limits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TD-E' against official documentation to confirm packaging details and compliance status. Ensure that the requested quantity aligns with standard tape and reel specifications provided by the manufacturer. Confirm that the component meets all relevant environmental regulations required for the intended deployment region before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -100 V rating and -1 A current capability is required in a compact SMD form factor. Consider the thermal derating curves if operating above ambient temperatures or without adequate heat sinking. Verify that the hFE rank matches the circuit's base drive requirements for optimal saturation performance.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1416 series, which includes complementary NPN devices like the 2SC3646. The series utilizes advanced fabrication processes to achieve superior switching speeds and low saturation voltages compared to standard general-purpose transistors. It is designed for applications demanding reliable performance in space-constrained environments.

Single Bipolar Transistors Replacement Considerations

The 2SC3646 is the complementary NPN device within the same series. Direct substitution requires verifying polarity compatibility and ensuring the replacement device meets the original circuit's voltage and current ratings.

Single Bipolar Transistors FAQ

What is the maximum collector current for the 2SA1416T-TD-E?

The maximum continuous collector current is -1 A, with a peak pulse current capability of -2 A.

How does the power dissipation change with mounting conditions?

At 25°C ambient temperature, power dissipation is 500 mW. When mounted on a ceramic substrate (250 mm² x 0.8 mm), it increases to 1.3 W.

What is the typical turn-on time for this transistor?

The typical turn-on time is 80 ns under specified test conditions.