2SA1428-O,T2WNLF(J

Single Bipolar Transistors Overview

The Toshiba 2SA1428 is a PNP silicon epitaxial transistor utilizing the PCT process. It features a maximum collector current of 2 A and a collector-emitter voltage rating of -50 V. The device achieves a low collector-emitter saturation voltage of -0.5 V at -1 A and offers high-speed switching with a typical storage time of 1.0 μs. Electrical characteristics include a transition frequency of 100 MHz, a DC current gain ranging from 70 to 240 depending on classification, and a maximum power dissipation of 1000 mW.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient conduction
• High-speed switching capability with short storage times
• Complementary pairing with the 2SC3668 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix (O or Y) to confirm the DC current gain binning requirements for your design. Confirm RoHS compatibility status directly with the manufacturer, as indicated by lot number markings. Ensure thermal derating calculations align with the specified safe operating area curves for continuous operation.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary push-pull stages requiring matched performance with the 2SC3668. Consider the -50 V breakdown limit and 2 A current capacity against load requirements. Evaluate the 100 MHz transition frequency suitability for the intended signal bandwidth and switching speeds.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's general-purpose PNP bipolar junction transistor lineup manufactured using the PCT epitaxial process. It is designed for robust performance in consumer electronics and industrial equipment, serving as a standard discrete solution for amplification and switching tasks within broader semiconductor portfolios.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC3668 as the complementary NPN counterpart. Verify pinout compatibility and electrical parameter overlaps before substituting with other generic PNP transistors offering similar voltage and current ratings.

Single Bipolar Transistors FAQ

What are the hFE classifications for this transistor?

The device is classified into two groups: 'O' ranges from 70 to 140, and 'Y' ranges from 120 to 240, measured at VCE = -2 V and IC = -0.5 A.

Is this component suitable for automotive safety-critical systems?

No. The documentation explicitly prohibits use in unintended applications such as automobiles, transportation signaling, or safety devices due to reliability standards not being met for those environments.

What is the maximum base current rating?

The absolute maximum rating for base current (IB) is -0.2 A.