2SA1428-Y,T2F(J

Single Bipolar Transistors Overview

The Toshiba 2SA1428 is a silicon PNP epitaxial planar transistor utilizing the PCT process, designed for power amplifier and switching applications. It features a low collector-emitter saturation voltage of −0.5 V maximum at an IC of −1 A and a high-speed transition frequency of 100 MHz typical. The device supports a continuous collector current of −2 A with a collector power dissipation of 1000 mW. It operates within a junction temperature range up to 150 °C and is packaged in a 2-7D101A format.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient power handling
• High-speed switching capability with short storage time
• Complementary pairing with the 2SC3668 NPN transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'Y,T2F(J)' against official Toshiba documentation to confirm binning classifications and environmental compliance status. Ensure design parameters remain within absolute maximum ratings to maintain reliability. Consult the Toshiba Semiconductor Reliability Handbook for derating guidelines under heavy load conditions before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring fast switching speeds and low saturation voltage in PNP configurations. Consider its complementary relationship with the 2SC3668 for push-pull amplifier stages. Evaluate thermal management requirements based on the 1000 mW power dissipation limit and ensure the operating junction temperature does not exceed 150 °C during peak loads.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's discrete semiconductor lineup, specifically engineered using the epitaxial planar (PCT) process technology. It serves as a general-purpose power transistor suitable for consumer electronics and industrial equipment where moderate current handling and rapid switching performance are required.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC3668 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is −50 V.

How is the DC current gain classified?

The hFE classification 'Y' indicates a DC current gain range of 120 to 240 when measured at IC = −0.5 A and VCE = −2 V.

What is the typical turn-on time for this transistor?

The typical turn-on time (ton) is specified as 0.1 μs under standard test conditions.