Single Bipolar Transistors 2SA1428-Y,T2F(M product image

2SA1428-Y,T2F(M

  • Description:TRANS PNP 50V 2A MSTM
  • Series:-

SKU:8e25142d7c12 Category: Brand:

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2SA1428-Y,T2F(M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 2A MSTM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1428-Y,T2F(M

  • Description:TRANS PNP 50V 2A MSTM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:SC-71
  • Supplier Device Package:MSTM
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1428-Y,T2F(M

2SA1428-Y,T2F(M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1428 is a PNP silicon epitaxial planar transistor manufactured using the PCT process. Designed for power amplifier and switching applications, it features a low collector-emitter saturation voltage of -0.5 V maximum at -1 A collector current. The device supports high-speed switching with a typical storage time of 1.0 μs and offers a transition frequency of 100 MHz. It operates within a junction temperature range up to 150 °C and provides a collector power dissipation of 1000 mW in a compact surface-mount package.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient power handling
  • High-speed switching capability with optimized storage time
  • Complementary pairing with the 2SC3668 NPN transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • General power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Ensure the selected variant matches the required DC current gain classification (O or Y) for your circuit design. Confirm availability through authorized distributors, as manufacturing status may change without notice.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP counterpart to the 2SC3668. Evaluate the hFE classification requirements; the 'Y' suffix indicates a higher gain range (120-240) compared to the standard 'O' classification. Consider the thermal derating curves provided in the datasheet when designing for ambient temperatures exceeding 25°C to maintain safe operating area limits.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SA series of general-purpose bipolar junction transistors. It utilizes an epitaxial planar structure designed for robust performance in consumer electronics and industrial equipment. The device is intended for use in computers, office equipment, and measuring instruments, adhering to standard reliability guidelines for general electronic applications.

Single Bipolar Transistors Replacement Considerations

The 2SA1428 is electrically complementary to the 2SC3668 NPN transistor. When replacing, ensure the substitute part matches the -50 V collector-emitter voltage rating and -2 A continuous collector current limit. Verify that the replacement package type accommodates the physical footprint constraints of the original design.

2SA1428-Y,T2F(M2SA1428-Y,T2F(M

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