Single Bipolar Transistors 2SA1428-Y(T2TR,A,F product image

2SA1428-Y(T2TR,A,F

  • Description:TRANS PNP 50V 2A MSTM
  • Series:-

SKU:ef308bfaf7cd Category: Brand:

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2SA1428-Y(T2TR,A,F is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 2A MSTM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1428-Y(T2TR,A,F

  • Description:TRANS PNP 50V 2A MSTM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:SC-71
  • Supplier Device Package:MSTM
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1428-Y(T2TR,A,F

2SA1428-Y(T2TR,A,F

Single Bipolar Transistors Overview

The Toshiba 2SA1428 is a PNP silicon epitaxial transistor utilizing the PCT process, designed for power amplifier and switching applications. It features a maximum collector-emitter voltage of -50 V and a continuous collector current rating of -2 A. The device achieves a low collector-emitter saturation voltage of -0.5 V at -1 A and exhibits high-speed switching with a typical storage time of 1.0 μs. DC current gain ranges from 70 to 240 depending on classification, and it operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient power handling
  • High-speed switching capability with short storage times
  • Complementary pairing with the 2SC3668 NPN transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba channels, as markings indicate potential variations. Confirm the specific hFE bin (O or Y) required for your design, as this affects the minimum DC current gain. Ensure operating conditions remain within absolute maximum ratings to maintain reliability. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing designs.

Single Bipolar Transistors Selection Notes

Select the 2SA1428 when a complementary match to the 2SC3668 is required in push-pull configurations. Consider the -50 V breakdown voltage and -2 A current limits for appropriate load matching. Evaluate the transition frequency of 100 MHz for suitable bandwidth requirements. Verify thermal management needs against the 1000 mW power dissipation limit at 25 °C ambient temperature.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's discrete semiconductor transistor portfolio, specifically engineered using the PCT (Planar Chip Technology) process. It serves as a standard PNP epitaxial type transistor intended for general electronics applications such as computers, office equipment, and industrial robots. The device is distinct from automotive or aerospace qualified parts unless explicitly stated.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC3668 as the direct complementary counterpart. No other substitute part numbers are documented in the provided source material.

2SA1428-Y(T2TR,A,F2SA1428-Y(T2TR,A,F

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