2SA1483-Y(TE12L,F)

2SA1483-Y(TE12L,F)

  • Description:RF TRANS PNP 45V 200MHZ PW-MINI
  • Series:-

SKU:55e430d16680 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS PNP 45V 200MHZ PW-MINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Voltage - Collector Emitter Breakdown (Max):45V
  • Frequency - Transition:200MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 10mA, 1V
  • Current - Collector (Ic) (Max):200mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:PW-MINI
  • Grade:-
  • Qualification:-

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2SA1483-Y(TE12L,F)

Overview

The 2SA1483-Y(TE12L,F) is a silicon PNP epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It utilizes the PCT process for high-frequency performance, featuring a typical transition frequency (fT) of 200 MHz and low collector output capacitance of 3.5 pF. The device supports a maximum continuous collector current of 500 mA and a collector-emitter voltage of -45 V. Designed for surface-mount applications, it operates within a junction temperature range of -55°C to +150°C and offers complementary pairing with the 2SC3803 NPN transistor.

Feature Summary

  • High transition frequency suitable for RF and video amplifier circuits
  • Low collector output capacitance for high-speed switching efficiency
  • Complementary design paired with the 2SC3803 NPN transistor

Applications

  • High frequency amplifier circuits
  • Video amplifier applications
  • High speed switching applications

Procurement Notes

Verify the specific suffix 'Y' against official Toshiba documentation to confirm binning or gain classification differences from the standard 2SA1483. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability varies. Ensure the TE12L reel packaging matches assembly requirements.

Selection Notes

Select this component when a PNP transistor with a 200 MHz transition frequency is required for high-speed signal processing. The low output capacitance makes it suitable for video and RF stages. Verify that the -45V breakdown voltage meets circuit requirements and that the thermal management supports the specified power dissipation limits in the target enclosure.

Part Context

This part belongs to the 2SA1483 series of high-frequency PNP transistors. It serves as the complementary counterpart to the 2SC3803 NPN transistor, facilitating push-pull configurations in audio and RF amplifiers. The TE12L designation indicates a specific tape-and-reel packaging format optimized for automated surface-mount assembly processes.

Replacement Considerations

The 2SC3803 is the documented complementary NPN pair. Direct substitutes require matching fT > 200 MHz, VCBO ≈ -60V, and similar package dimensions. Verify pinout compatibility and thermal characteristics before substitution.

2SA1483-Y(TE12L,F)2SA1483-Y(TE12L,F)

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