Single Bipolar Transistors 2SA1579U3T106R product image

2SA1579U3T106R

$0.42
  • Description:TRANS PNP 120V 0.05A UMT3
  • Series:-

SKU:5af55e5ca845 Category: Brand:

  
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2SA1579U3T106R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 120V 0.05A UMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1579U3T106R

  • Description:TRANS PNP 120V 0.05A UMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 30mA, 1.5A
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2mA, 6V
  • Power - Max:200 mW
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:UMT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1579U3T106R

2SA1579U3T106R

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SA1579U3T106R is a PNP silicon epitaxial planar transistor housed in an SOT-323 (UMT3) surface-mount package. It serves as a high-voltage amplifier component with a collector-emitter breakdown voltage of -120V and a maximum continuous collector current of -50mA. The device features a DC current gain (hFE) ranging from 180 to 560, a transition frequency of 140MHz, and a power dissipation rating of 200mW at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

  • High breakdown voltage capability for collector-emitter and collector-base terminals rated at -120V.
  • Designed to complement the 2SC4102U3 NPN transistor for matched circuit applications.
  • Optimized for general-purpose high-voltage amplification tasks.

Single Bipolar Transistors Applications

  • High voltage amplifier circuits
  • Complementary pairing with 2SC4102U3 transistors

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (R or S) required for your design, as the datasheet defines distinct gain ranges for each classification. Confirm that the SOT-323 package dimensions align with your PCB footprint constraints. Ensure thermal management strategies account for the 200mW power dissipation limit under expected operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -120V breakdown voltage is necessary within a compact SOT-323 form factor. It is suitable for designs requiring a transition frequency up to 140MHz. Consider the complementary relationship with the 2SC4102U3 if symmetrical signal processing is required.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1579 series of high-voltage amplifier transistors manufactured by ROHM Semiconductor. The 'U3' suffix indicates the SOT-323 (UMT3) surface-mount package configuration, while 'T106' denotes the standard taping packaging format used for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

The 2SARA41C is listed as a similar level replacement with the same pinout and package specifications. Verify electrical characteristics match before substitution.

Single Bipolar Transistors FAQ

What is the complementary NPN transistor for the 2SA1579U3?

The 2SC4102U3 is the designated complementary NPN transistor for the 2SA1579U3.

What are the hFE classification ranks for this transistor?

The transistor is classified into Rank R (hFE 180-390) and Rank S (hFE 270-560).

2SA1579U3T106R2SA1579U3T106R
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