2SA1586-GR,LF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1586-GR,LF is a silicon PNP epitaxial planar transistor designed for audio frequency general-purpose amplifier applications. It features a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of -0.15 A, and a DC current gain (hFE) range of 120 to 240. The device operates with a power dissipation of 100 mW and has a transition frequency (fT) of 80 MHz. Packaged in the USM-3 (SOT-323) surface-mount format, it supports a maximum operating temperature of 125 °C.

Single Bipolar Transistors Feature Summary

• Engineered specifically for audio frequency general-purpose amplifier circuits
• Utilizes silicon epitaxial planar technology for stable performance
• Provides high DC current gain suitable for signal amplification tasks

Single Bipolar Transistors Applications

• Audio frequency general-purpose amplifiers
• Low-frequency signal processing circuits
• General-purpose switching applications within specified limits

Single Bipolar Transistors Procurement Notes

Verify the complete part number including the suffix GR,LF against official Toshiba Semiconductor and Storage documentation to ensure correct packaging and compliance specifications. Confirm RoHS status and specific binning requirements for hFE during procurement planning. Cross-reference distributor listings with the manufacturer's official datasheet to validate authenticity and technical parameters before ordering.

Single Bipolar Transistors Selection Notes

Select this component when designing audio or low-frequency amplifier stages requiring a compact PNP transistor with moderate gain. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that thermal management accommodates the 100 mW power dissipation limit. Verify compatibility with the USM-3 footprint and consider the 120-240 hFE range for biasing stability in the target circuit design.

Single Bipolar Transistors Part Context

The 2SA1586 series belongs to Toshiba's lineup of small-signal bipolar junction transistors optimized for consumer electronics and audio equipment. These devices are characterized by their low noise and consistent gain characteristics, making them standard choices for pre-amplifier stages. The GR,LF suffix indicates specific tape-and-reel packaging and lead-free compliance, aligning with modern manufacturing standards.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements may differ in hFE distribution or fT characteristics. Do not assume pinout compatibility without verifying the specific package variant.