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2SA1586-Y(T5LND,F) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 0.15A SC-70. Review the specifications below when checking this part for your BOM.
The Toshiba 2SA1586-Y(T5LND,F) is a silicon PNP epitaxial bipolar junction transistor designed for low-frequency and audio frequency general-purpose amplifier applications. It operates with a collector-emitter voltage of -50 V and supports a maximum DC collector current of -150 mA. The device features a high DC current gain (hFE) ranging from 120 to 240, ensuring excellent linearity. It is housed in the compact USM package and is qualified under AEC-Q101 standards for automotive use.
Verify that the specific suffix matches the required AEC-Q101 qualification status. Confirm the intended application aligns with the manufacturer's guidelines for general use or automotive environments. Ensure compliance with all absolute maximum ratings during circuit design to maintain long-term reliability.
Select this component when designing circuits requiring a small-signal PNP transistor with high gain and low noise characteristics. The USM package is ideal for space-constrained designs. Consider the complementary 2SC4116 NPN transistor if a matched pair is needed for push-pull configurations.
This part belongs to the 2SA1586 series of silicon PNP epitaxial transistors manufactured by Toshiba Electronic Devices & Storage Corporation. The series is engineered specifically for audio frequency applications, offering a balance of high voltage handling and precise current gain control within a miniature surface-mount footprint.
The datasheet identifies the 2SC4116 as the complementary NPN transistor. No other direct substitute part numbers are documented in the official specifications.
Yes, the 2SA1586-Y variant is AEC-Q101 qualified and designated for automotive use.
The typical noise figure is 1 dB, with a maximum of 10 dB.
The 2SC4116 is listed as the complementary NPN transistor for this device.
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