2SA1587-BL,LF

Description：TRANS PNP 120V 0.1A SC-70
Series：-

SKU:f1f916537471 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA1587-BL,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 120V 0.1A SC-70. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1587-BL,LF

Description：TRANS PNP 120V 0.1A SC-70
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：350 @ 2mA, 6V
Power - Max：100 mW
Frequency - Transition：100MHz
Operating Temperature：125°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1587-BL,LF

2SA1587-BL,LF

Single Bipolar Transistors Overview

The Toshiba 2SA1587-BL,LF is a silicon PNP epitaxial transistor utilizing the PCT process. It features a collector-emitter voltage of -120 V and a maximum collector current of -100 mA. The BL suffix indicates a DC current gain (hFE) range of 350 to 700 at -2 mA. Electrical characteristics include a transition frequency of 100 MHz and a noise figure as low as 1 dB. The device is housed in a JEITA SC-70 package.

Single Bipolar Transistors Feature Summary

AEC-Q101 qualified for automotive reliability standards
High breakdown voltage capability up to -120 V
Excellent hFE linearity between low and medium currents
Low noise performance suitable for sensitive audio stages

Single Bipolar Transistors Applications

Audio frequency general purpose amplifier applications
First stages of MC head amplifiers
Low noise preamplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'BL' to confirm the required hFE binning range of 350 to 700. Ensure the 'LF' suffix is present if lead-free compliance is mandatory for the assembly process. Confirm that the SC-70 package dimensions align with the target PCB footprint before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when high voltage handling and low noise are critical requirements. The BL grading provides higher gain than standard variants, making it suitable for high-sensitivity input stages. Verify thermal derating requirements based on the specific mounting conditions and ambient temperature constraints of the application design.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's lineup of silicon PNP transistors designed for audio and general-purpose amplification. It serves as a complementary counterpart to the NPN 2SC4117. The product utilizes the PCT process technology to achieve superior electrical characteristics compared to older generation bipolar junction transistors.