2SA1587-GR,LF

Single Bipolar Transistors Overview

The Toshiba 2SA1587-GR,LF is a silicon PNP epitaxial planar transistor utilizing the PCT process. It features a collector-emitter voltage of -120 V and a maximum collector current of -100 mA. The device provides a DC current gain (hFE) ranging from 200 to 400 for the GR classification. It exhibits excellent hFE linearity with a ratio of 0.95 at specified currents. The noise figure is typically 1 dB at 1 kHz. Transition frequency reaches 100 MHz. Power dissipation is rated at 100 mW in standard packaging and 200 mW on FR4 boards.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability of -120 V for collector-base and collector-emitter terminals
• Excellent DC current gain linearity across varying collector currents
• Low noise performance suitable for audio frequency applications
• AEC-Q101 qualified for automotive reliability standards

Single Bipolar Transistors Applications

• Audio frequency general purpose amplifier circuits
• Automotive electronic systems requiring AEC-Q101 compliance
• Complementary pairing with 2SC4117 NPN transistors

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm package type and thermal rating. The LF(T) designation indicates JEDEC SC-70 packaging with 150°C junction temperature limits, while other suffixes denote different packages with 125°C limits. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when high voltage handling up to 120 V is required in a small outline package. The GR classification ensures an hFE range of 200 to 400. Consider the low noise figure for sensitive signal amplification stages. Ensure the application operates within the absolute maximum ratings, particularly regarding power dissipation derating based on ambient temperature and board copper pad area.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's lineup of silicon PNP epitaxial transistors designed for audio and general-purpose amplification. It utilizes the PCT process technology to achieve high voltage tolerance and low noise characteristics. The part is specifically engineered to complement the 2SC4117 NPN transistor, facilitating balanced push-pull circuit designs in compact form factors.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4117 as its complementary counterpart. No other direct substitute part numbers are documented in the official specification. Verify pinout compatibility and electrical parameters against alternative components if cross-referencing is necessary.

Single Bipolar Transistors FAQ

What is the typical noise figure of the 2SA1587?

The typical noise figure is 1 dB, measured at VCE = -6 V, IC = -0.1 mA, f = 1 kHz, and RG = 10 kΩ.

How does the hFE linearity perform?

The device exhibits excellent hFE linearity, with a ratio of hFE (IC = -0.1 mA) to hFE (IC = -2 mA) being typically 0.95.

What is the transition frequency?

The transition frequency (fT) is typically 100 MHz, measured at VCE = -6 V and IC = -1 mA.