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The Toshiba 2SA1618-Y(TE85L,F) is a dual PNP silicon epitaxial transistor in a compact SMD package. It features a collector-emitter voltage of -50 V and a continuous collector current of -150 mA per element, with a total power dissipation of 300 mW. The device offers a DC current gain (hFE) range of 120 to 400 and an excellent linearity ratio of 0.95. Designed for audio frequency general-purpose amplifier applications, it provides high reliability within a small footprint.
Verify the specific ordering suffix against official documentation to confirm thermal rating variations. Ensure compliance with RoHS directives and environmental regulations applicable to your region. Confirm that the intended application does not fall under unintended use restrictions defined by the manufacturer.
Select this component for applications requiring a dual PNP transistor with high current gain and good linearity. Consider the complementary 2SC4207 for balanced circuit designs. Evaluate thermal derating requirements based on the specified junction temperature limits and ambient operating conditions.
This part belongs to the 2SA1618 series of small-signal transistors manufactured using Toshiba's PCT process technology. It is designed as a cost-effective solution for consumer electronics and audio equipment where reliable amplification and compact packaging are essential requirements.
The datasheet explicitly identifies the 2SC4207 as the complementary NPN counterpart. No other direct substitute part numbers are documented in the provided source material.