2SA1667

Single Bipolar Transistors Overview

The 2SA1667 is a Silicon PNP Epitaxial Planar Transistor designed as the complement to the 2SC4381/4382 series. It features an absolute maximum collector current of -150 A and a collector-emitter breakdown voltage of -150 V. The device supports a maximum power dissipation of 25 W at a case temperature of 25°C, with a junction temperature range from -55°C to +150°C. Electrical characteristics include a minimum DC current gain (hFE) of 150 and a typical transition frequency (fT) of 20 MHz.

Single Bipolar Transistors Feature Summary

• Utilizes a PNP epitaxial planar silicon structure for robust performance.
• Engineered with high durability against breakdown events.
• Features wide safe operating area (ASO) capabilities.
• Designed for efficient switching in vertical output applications.

Single Bipolar Transistors Applications

• TV Vertical Output circuits
• Audio Output Driver stages
• General Purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the FM20 (TO-220F) package dimensions align with the target PCB footprint and thermal management requirements. Ensure compatibility with the intended complementary NPN transistor pair for balanced circuit performance.

Single Bipolar Transistors Selection Notes

Select this component when a high-current PNP transistor is required to match the 2SC4381/4382 series. Consider the 25 W power dissipation limit and the necessity of adequate heatsinking for sustained operation above ambient temperatures. Evaluate the -150 V rating against the peak voltages present in the vertical output stage.

Single Bipolar Transistors Part Context

This transistor belongs to Sanken's lineup of power bipolar transistors, specifically engineered for audio and video output stages. It serves as the PNP counterpart to the 2SC4381/4382 NPN devices, ensuring matched characteristics for push-pull amplifier configurations in consumer electronics.

Single Bipolar Transistors Replacement Considerations

The 2SA1668 is documented as a related variant within the same product family. Verify if the 2SA1668 meets the specific electrical requirements of the design, noting potential differences in hFE or leakage specifications between the two part numbers.

Single Bipolar Transistors FAQ

What is the complementary NPN transistor for the 2SA1667?

The 2SA1667 is designed as the complement to the 2SC4381 and 2SC4382 NPN transistors.

What is the maximum collector-emitter voltage for this device?

The absolute maximum collector-emitter breakdown voltage (V(BR)CEO) is -150 V.

What is the typical transition frequency (fT)?

The typical transition frequency is 20 MHz under conditions of VCE = -12V and IE = 0.2A.