2SA1680,F(J

Single Bipolar Transistors Overview

The Toshiba 2SA1680 is a silicon PNP epitaxial transistor utilizing the PCT process, designed for power amplifier and switching applications. It features a low collector-emitter saturation voltage of −0.5 V (max) at IC = −1 A and high-speed storage time of 300 ns (typ.). The device supports a maximum collector current of −2 A with a collector power dissipation of 900 mW at 25 °C. Key electrical characteristics include a DC current gain (hFE) range of 120 to 400 at IC = −100 mA and a transition frequency of 100 MHz. It operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient power handling
• High-speed switching capability with short storage time
• High DC current gain suitable for amplification tasks

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba channels or authorized distributors, as indicated by lot number markings on the component. Confirm environmental compliance before integration into regulated equipment. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines and application precautions to ensure long-term operational stability under specified thermal and electrical loads.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a complementary match to the 2SC4408 NPN transistor. Evaluate the −50 V collector-emitter breakdown voltage against circuit requirements. Consider the TO-92MOD package constraints for thermal management, ensuring adequate heat sinking to maintain performance within the 900 mW dissipation limit during continuous operation.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's lineup of general-purpose PNP transistors engineered for audio and switching functions. It complements the 2SC4408 in push-pull configurations. The product utilizes an epitaxial structure optimized for fast switching speeds and low saturation voltages, making it suitable for consumer electronics and industrial control systems where compact form factors are required.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4408 as the complementary N-channel counterpart. Verify pinout compatibility and electrical parameters when substituting with other PNP transistors from different manufacturers.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is −50 V.

Is this transistor suitable for high-frequency RF applications?

No, the transition frequency is rated at 100 MHz, which is intended for audio frequency power amplifiers and general switching rather than RF use.

What is the typical storage time for switching operations?

The typical storage time (tstg) is 300 ns.