2SA1680(F,M)

Single Bipolar Transistors Overview

The Toshiba 2SA1680 is a PNP silicon epitaxial transistor manufactured using the PCT process. It features a maximum collector-emitter voltage of -50 V and a collector current rating of -2 A. The device provides a high collector power dissipation of 900 mW at 25 °C ambient temperature. Electrical characteristics include a low collector-emitter saturation voltage of -0.5 V (max) at -1 A collector current and a transition frequency of 100 MHz. The component utilizes a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient power handling
• High-speed switching capability with short storage time
• High collector power dissipation rating

Single Bipolar Transistors Applications

• Power amplifier applications
• Power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba channels, as markings indicate specific environmental compliance variations. Confirm package type matches design requirements. Review absolute maximum ratings to ensure operational conditions remain within specified limits for reliability. Consult the Toshiba Semiconductor Reliability Handbook for derating concepts and methods before finalizing designs.

Single Bipolar Transistors Selection Notes

Select this component for general electronics applications requiring PNP switching or amplification. Ensure the operating voltage does not exceed the -50 V collector-emitter breakdown limit. Verify thermal management capabilities align with the 900 mW dissipation rating. Consider complementary pairing with the 2SC4408 NPN transistor for balanced circuit designs.

Single Bipolar Transistors Part Context

This component belongs to the family of silicon PNP epitaxial transistors produced by Toshiba Semiconductor and Storage. It is designed for use in consumer electronics, office equipment, and measuring instruments. The device supports standard through-hole mounting configurations suitable for general-purpose circuit implementations.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC4408 as the complementary NPN transistor. No other direct substitute part numbers are documented in the provided source material.