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2SA1700E-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP PNP 0.2A 400V. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SA1700E-E
- Description：BIP PNP 0.2A 400V
- Series：*
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SA1700E-E
Single Bipolar Transistors Overview
The onsemi 2SA1700E-E is a single PNP bipolar junction transistor (BJT) designed for high-voltage switching applications. It features a maximum collector current of 0.2 A and a collector-emitter voltage rating of 400 V. The device is manufactured using onsemi’s standard bipolar process technology, ensuring robust reliability and consistent performance across industrial and commercial environments. This component serves as a discrete solution for power management circuits requiring moderate current handling with high voltage blocking capabilities.
Single Bipolar Transistors Feature Summary
- High voltage blocking capability suitable for demanding power circuits
- Reliable PNP switching performance in discrete configurations
Single Bipolar Transistors Applications
- Industrial power supply circuits
- Commercial equipment switching
- General-purpose high-voltage control
Single Bipolar Transistors Procurement Notes
Verify the specific ordering suffix to ensure compliance with packaging requirements. Confirm that the requested variant matches the exact electrical specifications required for the design. Cross-reference the manufacturer's latest datasheet to validate pinout compatibility and thermal characteristics before integration into final assemblies.
Single Bipolar Transistors Selection Notes
Select this component when a PNP BJT with 400 V breakdown and 0.2 A current capacity is required. Consider its package type and thermal resistance relative to the system's heat dissipation needs. Evaluate alternative transistors only if higher current or different voltage ratings are necessary for the specific application constraints.
Single Bipolar Transistors Part Context
This part belongs to onsemi’s portfolio of discrete bipolar transistors, supporting their broader intelligent power solutions. It complements other switching devices used in energy infrastructure and industrial drive systems, providing essential components for building reliable power conversion stages within larger electronic systems.
Single Bipolar Transistors Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference guides for compatible alternatives.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
