2SA1706T-AN

Single Bipolar Transistors Overview

The 2SA1706T-AN is a PNP bipolar junction transistor manufactured by onsemi, designed for high-current switching applications. It features an NMP surface-mount package and supports a maximum collector current of 2 A with a peak pulse rating of 4 A. The device operates with a collector-to-emitter voltage of -50 V and a collector-to-base voltage of -60 V. Key electrical characteristics include a gain-bandwidth product of 150 MHz and low saturation voltages, specifically VCE(sat) ranging from -0.3 V to -0.7 V at 1 A collector current. The component is rated for a junction temperature up to 150 °C and utilizes FBET and MBIT processes.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT manufacturing processes for enhanced performance
• Provides large current capacity and wide safe operating area
• Engineered for fast switching speed capabilities

Single Bipolar Transistors Applications

• Voltage regulators
• Relay drivers
• Lamp drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'T' corresponds to the tape-and-reel packaging configuration as documented in official datasheets. Confirm that the required hFE rank (S or T) matches the design specifications, as gain classification varies by bin. Ensure compatibility with the NMP package dimensions and verify thermal management requirements against the 1 W dissipation limit at specified ambient temperatures.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust PNP switching with high current handling capabilities. The device is suitable for applications demanding low saturation voltage to minimize power loss during conduction. Consider the 150 MHz gain-bandwidth product for high-frequency signal processing needs. Evaluate the NMP package constraints regarding board space and thermal dissipation relative to the 1 W power rating.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1706 series of single PNP transistors. It shares core electrical specifications with the 2SA1706S-AN variant, differing primarily in packaging format. The series is characterized by its adoption of advanced semiconductor processes to achieve low saturation voltages and high current density within a compact surface-mount footprint.

Single Bipolar Transistors Replacement Considerations

The 2SA1706S-AN is a confirmed substitute part number offering identical electrical specifications. Verify that the S suffix variant meets the specific packaging requirements of the target assembly, as it may differ in shipping configuration despite functional equivalence.