2SA1708S-AN

Single Bipolar Transistors Overview

The Sanyo 2SA1708S-AN is a PNP silicon epitaxial planar transistor designed for high-voltage switching applications. It utilizes FBET and MBIT processes to achieve high breakdown voltage, large current capacity, and fast switching speed. The component features a low collector-emitter saturation voltage (VCE(sat)) and is housed in an SC-59 (SOT-363) surface-mount package.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability suitable for demanding switching environments
• Fast switching speed enabled by advanced FBET and MBIT process technologies
• Low collector-emitter saturation voltage for improved efficiency

Single Bipolar Transistors Applications

• High-voltage switching circuits
• General-purpose power management applications

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation carefully, as ON Semiconductor also produces this part number. Confirm the specific suffix 'S-AN' matches your required packaging and tape-and-reel specifications. Ensure the datasheet version aligns with the intended electrical characteristics for your design.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP transistor with high voltage ratings and fast switching performance is required. The SC-59 package offers space-saving benefits for dense PCB layouts. Verify thermal requirements against the device's dissipation limits in your specific application context.

Single Bipolar Transistors Part Context

This transistor belongs to a family of high-voltage switching devices originally developed by Sanyo Semicon Device. The product line has been integrated into ON Semiconductor's portfolio, which continues to manufacture and distribute the component under the same part number structure.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors from ON Semiconductor or Sanyo with equivalent voltage and current ratings in the SC-59 package. Cross-reference specific VCEO and IC parameters before substitution.