2SA1709S-AN

Single Bipolar Transistors Overview

The onsemi 2SA1709S-AN is a PNP bipolar junction transistor housed in an NMP through-hole package. It supports a maximum collector current of 2 A and a collector-emitter voltage of 100 V. The device features a gain-bandwidth product of 120 MHz, a collector cutoff current of 100 nA, and a collector dissipation rating of 1 W. It operates at junction temperatures up to 150 °C.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for high breakdown voltage and large current capacity
• Provides fast switching speed with low collector-to-emitter saturation voltage

Single Bipolar Transistors Applications

• DC/DC converters
• Motor drivers
• Relay drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the component matches the required package type and electrical ratings for the target application. Ensure compliance with relevant environmental standards such as RoHS and REACH requirements specified by the manufacturer.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 100 V collector-emitter voltage and 2 A continuous current capability is required. Consider the NMP package for through-hole mounting applications. Evaluate the 120 MHz gain-bandwidth product and switching times against circuit speed requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1709 series manufactured by onsemi. It is designed as a general-purpose power transistor utilizing advanced epitaxial planar silicon technology. The device is intended for use in various switching and amplification circuits requiring reliable performance under moderate power conditions.

Single Bipolar Transistors Replacement Considerations

Consult official datasheets for direct replacements. Verify pinout compatibility and electrical specifications match the original design requirements before substituting.