2SA1721RTE85LF

Description：TRANS PNP 300V 0.1A S-MINI
Series：-

SKU:2bcf1982ea4b Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA1721RTE85LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 300V 0.1A S-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1721RTE85LF

Description：TRANS PNP 300V 0.1A S-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：300 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 20mA, 10V
Power - Max：150 mW
Frequency - Transition：50MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：S-Mini
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1721RTE85LF

2SA1721RTE85LF

Single Bipolar Transistors Overview

The 2SA1721RTE85LF is a PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 1 A. The device is designed for surface-mount applications, utilizing the TSM-6 package configuration. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 240 under specified test conditions, with a maximum collector cutoff current of 10 nA. Power dissipation is rated at 625 mW, ensuring reliable operation within standard thermal limits for general-purpose switching and amplification tasks.

Single Bipolar Transistors Feature Summary

PNP silicon epitaxial planar construction for stable performance
High DC current gain suitable for amplifier stages
Low saturation voltage for efficient switching operations
Compact surface-mount packaging for high-density mounting

Single Bipolar Transistors Applications

General-purpose switching circuits
Amplifier stages in audio equipment
Driver circuits for portable devices
Logic interface buffers

Single Bipolar Transistors Procurement Notes

Verify the complete part number including the suffix TE85LF to ensure correct tape-and-reel packaging specifications. Confirm RoHS compliance status through official Toshiba documentation prior to integration. Cross-reference the manufacturer's latest datasheet for any updates on recommended operating conditions or thermal derating curves to maintain design integrity.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 60 V breakdown and 1 A current capability is required in a compact surface-mount form factor. Evaluate the hFE range requirements against circuit gain needs. Ensure the thermal management strategy accommodates the 625 mW power dissipation limit in the intended PCB layout environment.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's lineup of small-signal PNP transistors optimized for surface-mount technology. It serves as a discrete semiconductor solution for low-power analog and digital applications. The TSM-6 package allows for automated assembly processes, supporting mass production efficiency in consumer electronics and industrial control systems requiring reliable PNP switching elements.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements must match the 60 V Vceo, 1 A Ic, and TSM-6 package constraints. Verify pinout compatibility and thermal characteristics before implementation.