2SA1729S-TD-E

Single Bipolar Transistors Overview

The onsemi 2SA1729S-TD-E is a PNP epitaxial planar silicon transistor designed for high-speed switching applications. It utilizes FBET and MBIT processes to achieve large current capacity, low collector-to-emitter saturation voltage, and small-sized packaging. The device supports a continuous collector current of -1.5 A and a peak pulse current of -3 A. Key electrical parameters include a collector-to-base breakdown voltage of -50 V, a gain-bandwidth product of 300 MHz, and a maximum junction temperature of 150 °C.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for enhanced performance
• Provides large current capacity with low saturation voltage
• Engineered for high-speed switching operations
• Utilizes a compact package design

Single Bipolar Transistors Applications

• High-speed switching circuits
• General electronics equipment
• Home appliances
• Audio-visual equipment
• Communication devices

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm tape-and-reel packaging and binning classifications. Confirm that the component meets standard application requirements rather than special high-reliability criteria. Ensure compatibility with intended operating temperatures and load conditions before procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring fast switching speeds and moderate current handling capabilities. Consider the -40 V collector-to-emitter voltage rating when determining circuit limits. Evaluate the thermal dissipation characteristics relative to the mounting surface area to ensure operation within the specified junction temperature range.

Single Bipolar Transistors Part Context

This component belongs to the 2SA1729 series of PNP transistors manufactured by Sanyo Semiconductor, now part of onsemi. The series is characterized by its use of advanced epitaxial planar technology optimized for general-purpose switching tasks in consumer and industrial electronic systems.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for verified equivalents. Verify pinout compatibility and electrical parameter alignment before replacing the original component in existing designs.

Single Bipolar Transistors FAQ

What manufacturing processes are used for the 2SA1729?

The device adopts FBET and MBIT processes.

What is the gain-bandwidth product of the transistor?

The gain-bandwidth product is 300 MHz at a collector current of -100 mA.

What is the maximum collector pulse current?

The maximum collector pulse current is -3 A.